The computational complexity and time consumed have proven to be really effective in modeling the quantum thermal transport of a nanometer resistive random access memory (RRAM) cell. This is because classical and semiclassical approaches lead to results considerably far from quantum ones. In this work, a methodology for the characterization of the properties of the conducting filament has been introduced. For this purpose, simulation results have been combined with measurable data in the cell, as well as with the properties of the materials used in its construction.
Academic year: 2021/2022
Supervisor: Emilio Ruiz Reina
